B1 igbt sgh80n60ufd sgh80n60ufd ultrafast igbt general description fairchilds ufd series of insulated gate bipolar transistors igbts provides low conduction and switching losses. Datenblatt datasheet ika15n60t infineon technologies. Datasheet catalog for integrated circuits, diodes, triacs, and other. G10n60a fast igbt in npttechnology components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Datasheet production data features high voltage rail up to 600 v dvdt immunity 50 vnsec in full temperature range driver current capability. Single phase, half wave, 60 hz, resistive or inductive load. All information recommendations and suggestions appearing herein concerning this product are based upon data obtained from the manufacturer andor recognized technical sources.
Absolute ratings limiting values symbol parameter value unit vrrm repetitive peak reverse voltage 300 v ifrms rms forward voltage 80 a ifav average forward current 40 a ifrm repetitive peak forward current f 200khz, tp 500ns sinusoidal waveform 120 a tstg storage temperature range 65. Refer to the corresponding software manual for more information. Toshiba field effect transistor silicon n channel mos type mosiii 2sk2611 dc. Gp battery gb104 solar storage system datasheet enf. G20n60 datasheet, g20n60 pdf, g20n60 data sheet, datasheet, data sheet, pdf. Gear tooth speed sensors gs102301 sensors threaded, straight connector gear tooth speed sensor rated to 140 c description the gs1023 series gear tooth speed sensors are hall effect devices designed for use in applications where ferrous edge detectionnear zero speed sensing is needed. G10n60a datasheet pdf 600v, 10a, igbt infineon, sgb10n60adatasheet, g10n60a pdf, g10n60a pinout, equivalent, data, circuit, output, g10n60a schematic. This process, which uses feature sizes approaching those of lsi integrated circuits gives. The information given in this data sheet shall in no event be regarded as a guarantee. Datasheetpanel mount general notes 1 option k is designed and tested for use with printed circuit boards or ringfork terminals having a thickness between 0. G80n60 datasheet vces 660v, ultrafast igbt fairchild.
The ufd series is designed for applications such as motor. Pure storage flasharrayx, the worlds first 100% allflash endtoend nvme and nvmeof array, now optionally includes a storage class memory boost to address the most demanding enterprise applications performance requirements. G10n60a datasheet pdf 600v, 10a, igbt infineon, sgb10n60adatasheet, g10n60a pdf, g10n60a pinout, equivalent, data, circuit, output. Nchannel enhancementmode power mosfet dss dson d description absolute maximum ratings symbol units vds v vgs id a id a idm d at ta25c wc tstg tj symbol value unit parameter rating gatesource voltage continuous drain current3 continuous drain current3 pulsed drain current155 to 150 c.
Detailed profile including pictures and manufacturer pdf. Easy management all from the comfort of a single app, lenovo companion allows you to manage your system health, configure system updates, purge your pc of unnecessary files and much more. This device has the high input impedance of a mosfet and the low onstate conduction loss of a bipolar transistor. The datasheet is printed for reference information only. Fga25n120antd 1200 v, 25 a npt trench igbt 2006 fairchild semiconductor corporation 9. Obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. For higher load currents, the k standoff temperature must not exceed 105c. P absolute maximum ratings tc 25, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 1. I absolute maximum ratings tc 25, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v continuous id 20 a drain current pulsed idm 80 a avalanche energy single pulsednote 2 eas 1200 mj to247 370. G30n60 datasheet, g30n60 pdf, g30n60 data sheet, g30n60 manual, g30n60 pdf, g30n60, datenblatt, electronics g30n60, alldatasheet, free, datasheet, datasheets, data. Voltage range 50 to volts current 10 amperes maximum ratings and electrical characteristics ratings at 25 oc ambient temperature unless otherwise specified. O absolute maximum ratings tc25c unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 10 a drain current continuous id 10 a pulsed note 2 idm 38 a avalanche energy.
It is the users responsibility to determine the safety, toxicity and suitability of hisher own use, handling and disposal request. G10n60a fast igbt in npttechnology components datasheet pdf data sheet free from. G20n60 datasheet, g20n60 pdf, g20n60 data sheet, g20n60 manual, g20n60 pdf, g20n60, datenblatt, electronics g20n60, alldatasheet, free, datasheet, datasheets, data. The information given in this data sheet shall in no event be regarded as a guarantee of conditions or. Gb60 family edial indtrial rade sl power electronics.
B hgtg30n60a4 600v, smps series nchannel igbt the hgtg30n60a4 is a mos gated high voltage switching device combining the best features of mosfets and bipolar transistors. These products may be used in a diverse range of applications and whilst every effort is made to ensure the information in this data sheet is accurate, it. Best value g10n60a great deals on g10n60a from global. Enhanced security with smart usb protection for preventing sensitive business data from leaking you have the reassurance of. Trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not. Fast igbt in npttechnology, sgb10n60a datasheet, sgb10n60a circuit, sgb10n60a data sheet. Toshiba field effect transistor silicon n channel mos type. C1 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor andor its gl obal subsidiaries, and is not fairchild fairchild. G30n60b3 datasheet, g30n60b3 pdf, g30n60b3 data sheet, g30n60b3 manual, g30n60b3 pdf, g30n60b3, datenblatt, electronics g30n60b3, alldatasheet, free, datasheet. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. Siemens simotion p3204 profinet ethernet tcpip version 1. Semiconductor technical data kf12n60pf n channel mos field effect transistor revision no. The firmware can be updated using the hardware manager which is included with the programming software.
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